三星电机与高通合作开发用于2.1D封装的有机桥接技术
三星电机（Samsung Electro-Mechanics）正与高通（Qualcomm）合作，为人工智能（AI）半导体所用的先进封装开发“有机桥接”（organic bridge）技术，面向2.1D封装。该技术属于先进封装环节，与AI芯片供应链相关。
原文深度解读
本文报道三星电机（Samsung Electro-Mechanics）与高通（Qualcomm）合作开发用于人工智能（AI）半导体先进封装的“有机桥接”（organic bridge）技术，面向2.1D封装。文章涉及三星电机、高通、三星电子代工业务及三星Device Solutions R&D Japan（DSRJ）等主体，时间线包括2024年10月高通提交“Interconnect Bridge”专利、2025年3月高通在韩国招聘有机桥接开发人员、以及2026年9月9日至11日KPCA Show 2026展示相关技术。关键数字包括有机桥接嵌入5至7层RDL电路层、目标线宽/间距1.5微米至2微米、过孔尺寸4微米至5微米、芯片间目标图形密度每毫米500至1000个连接。该技术属于先进封装环节，与AI芯片供应链中的FC-BGA基板、GPU与HBM互连等直接相关。
- 三星电机与高通已联合开发用于2.1D封装的有机桥接技术超过一年，正在评估嵌入有机桥接、用于连接高通芯片的倒装芯片球栅阵列（FC-BGA）基板的性能与可靠性。
- 有机桥接类似英特尔EMIB封装中的硅桥，但使用印刷电路板（PCB）中常见的有机材料而非硅，并通过RDL工艺在有机绝缘材料上形成多层精细电路，其布线比传统FC-BGA基板中的积层电路更精细。
- 高通可能在数据中心大型多芯片半导体中采用有机桥接；其于2024年10月提交“Interconnect Bridge”专利，并于2025年3月在韩国招聘有机桥接开发人员。
- 三星电机正在制造带有腔体的FC-BGA基板以嵌入有机桥接，桥接来源考虑内部生产和外部采购两种方式；其自身试验线正在小批量生产有机桥接用于评估，三星Device Solutions R&D Japan（DSRJ）也在生产样品，同时公司还在评估使用外部合作伙伴制造的有机桥接并嵌入其FC-BGA基板。
- 三星电机除高通外还与多个客户开发集成有机桥接的2.1D封装基板，策略旨在避免依赖与英特尔EMIB封装相关的知识产权（IP）；英特尔自2017年开始将该技术应用于量产并积累相关IP，多家大型科技公司正考虑将有机桥接作为硅桥的替代方案。
- 三星电机2.1D封装基板技术使用嵌入FC-BGA基板的有机桥接，包含5至7层RDL电路层，目标是将有机桥接电路线宽和间距缩小至1.5微米至2微米，过孔尺寸缩小至4微米至5微米，芯片间目标图形密度为每毫米500至1000个连接；三星电子代工业务预计将评估封装性能与可靠性，并正在开发包括使用硅桥的2.3D Cube-E和基于有机RDL中介层的2.3D Cube-R在内的先进封装技术。
供应链影响
- 若有机桥接技术成熟并进入量产，可能增加对FC-BGA基板及有机桥接嵌入工艺的需求，从而影响先进封装基板供应链的产能与技术路线选择。
- 三星电机同时考虑内部生产和外部采购有机桥接，可能使有机桥接供应来源呈现多元化，但具体影响取决于其试验线良率、外部合作伙伴能力及客户验证进度。
- 该技术旨在避免依赖英特尔EMIB相关IP，可能推动其他大型科技公司探索有机桥接替代硅桥，从而影响硅桥与有机桥接在AI芯片封装中的相对采用节奏。
- 三星电机与三星电子代工业务的潜在协作，可能使有机桥接基板与代工先进封装服务形成联动，但实际供应链影响取决于封装性能与可靠性评估结果。
- 高通若在数据中心大型多芯片半导体中采用有机桥接，可能带动GPU与HBM等高带宽互连场景对更高I/O密度基板的需求，但取决于其产品路线图与量产时间。
系统解读，仅作为判断线索，不构成备货、出货、涨价或投资建议。
三星电机（Samsung Electro-Mechanics）使用有机桥接的2.1D封装技术，在2026年9月9日至11日举行的KPCA Show 2026上展示。（照片：THE ELEC）
三星电机（Samsung Electro-Mechanics）正与高通（Qualcomm）合作，为人工智能（AI）半导体所用的先进封装开发“有机桥接”（organic bridge）技术。三星电机还在与高通之外的多个客户推进有机桥接技术的联合开发。
有机桥接类似于英特尔（Intel）嵌入式多芯片互连桥（EMIB）封装中使用的硅桥，但使用印刷电路板（PCB）中常见的有机材料，而非硅。
据行业消息人士周一称，三星电机和高通一直在联合开发用于2.1D封装的有机桥接技术。两家公司开发并验证该技术已超过一年。他们正在评估嵌入有机桥接、用于连接高通芯片的倒装芯片球栅阵列（FC-BGA）基板的性能和可靠性。
据了解，高通正在考虑在数据中心的大型多芯片半导体中使用有机桥接。2024年10月，该公司提交了一项“Interconnect Bridge”技术专利。该技术涉及将单独制造的有机材料桥接嵌入封装基板，以连接多个芯片。高通还于3月在韩国招聘了有机桥接开发人员。
有机桥接是一种连接集成到单个封装中的多个半导体芯片的组件。它可以被视为具有超精细电路的极小型基板。通过重分布层（RDL）工艺，在有机绝缘材料上形成多层精细电路。所得布线比传统FC-BGA基板中使用的积层电路更精细，允许在更小面积上传输更多信号。该技术旨在提高芯片之间的输入/输出（I/O）密度和带宽，包括图形处理单元（GPU）和高带宽存储器（HBM）。它的作用类似于英特尔EMIB中使用的硅桥，但使用基板制造工艺而非半导体制造工艺在有机材料上制造。
三星电机正在制造带有腔体的FC-BGA基板，用于嵌入有机桥接。该公司正在考虑两种桥接来源方式：内部生产和外部采购。它正在自己的试验线上小批量生产有机桥接用于评估。三星电子三星综合技术院（SAIT）下属研究机构三星Device Solutions R&D Japan（DSRJ）也在生产样品。三星电机还在评估使用外部合作伙伴制造的有机桥接，并将其嵌入其FC-BGA基板。
三星电机正在与高通之外的多个客户开发集成有机桥接的2.1D封装基板。该策略旨在避免依赖与英特尔EMIB封装相关的知识产权（IP）。英特尔开发EMIB，是为了通过仅在需要高密度连接的地方放置小型桥接，来解决硅中介层的成本和制造挑战。该公司于2017年开始将该技术应用于量产，并积累了相关IP。多家大型科技公司正在考虑将有机桥接作为硅桥的替代方案。
三星电机的2.1D封装基板技术使用嵌入FC-BGA基板的有机桥接，包含5至7层RDL电路层。该公司目标是将有机桥接电路的线宽和间距缩小至1.5微米（$\mu\text{m}$）至2微米，同时将过孔尺寸缩小至4微米至5微米。芯片间目标图形密度为每毫米500至1000个连接。
与三星电子代工业务的合作也引起关注。在三星电机制造基于有机桥接的FC-BGA基板后，三星电子代工业务预计将评估封装性能和可靠性。三星电子代工业务正在开发先进封装技术，包括使用硅桥的2.3D Cube-E和基于有机RDL中介层的2.3D Cube-R。三星电机的有机桥接基板预计将支持三星电子代工封装服务的扩展。
Samsung Electro-Mechanics' 2.1D package technology using an organic bridge, showcased at KPCA Show 2026 held Sept. 9-11. (Photo: THE ELEC)
Samsung Electro-Mechanics is working with Qualcomm to develop an “organic bridge” technology for advanced packaging used in artificial intelligence (AI) semiconductors. Samsung Electro-Mechanics is also pursuing joint development of the organic bridge technology with multiple customers beyond Qualcomm.
The organic bridge is similar to the silicon bridge used in Intel’s Embedded Multi-die Interconnect Bridge (EMIB) packaging, but uses organic materials commonly found in printed circuit boards (PCBs) instead of silicon.
According to industry sources on Monday, Samsung Electro-Mechanics and Qualcomm have been jointly developing organic bridge technology for use in 2.1D packaging. The companies have been developing and validating the technology for more than a year. They are evaluating the performance and reliability of flip-chip ball grid array (FC-BGA) substrates in which organic bridges are embedded to connect Qualcomm chips.
Qualcomm is understood to be considering the use of organic bridges in large multi-die semiconductors for data centers. In October 2024, the company filed a patent for an “Interconnect Bridge” technology. The technology involves embedding a separately manufactured organic-material bridge in a package substrate to connect multiple dies. Qualcomm also recruited personnel for organic bridge development in South Korea in March.
An organic bridge is a component that connects multiple semiconductor dies integrated into a single package. It can be viewed as an extremely small substrate with ultrafine circuitry. Multiple layers of fine circuits are formed on an organic insulating material through a redistribution layer (RDL) process. The resulting wiring is finer than the buildup circuits used in conventional FC-BGA substrates, allowing more signals to be transmitted over a smaller area. The technology is designed to increase input/output (I/O) density and bandwidth between dies, including graphics processing units (GPUs) and high-bandwidth memory (HBM). It serves a role similar to the silicon bridge used in Intel's EMIB, but is manufactured on an organic material using substrate manufacturing processes rather than semiconductor fabrication processes.
Samsung Electro-Mechanics is manufacturing FC-BGA substrates with cavities where the organic bridges are embedded. The company is considering two approaches for sourcing the bridges: in-house production and external procurement. It is producing small quantities of organic bridges for evaluation on its own pilot line. Samsung Device Solutions R&D Japan (DSRJ), a research organization under Samsung Electronics' Samsung Advanced Institute of Technology (SAIT), is also producing samples. Samsung Electro-Mechanics is also evaluating the use of organic bridges manufactured by external partners and embedded into its FC-BGA substrates.
Samsung Electro-Mechanics is developing 2.1D package substrates incorporating organic bridges with multiple customers in addition to Qualcomm. The strategy is aimed at avoiding reliance on intellectual property (IP) associated with Intel's EMIB packaging. Intel developed EMIB to address the cost and manufacturing challenges of silicon interposers by placing small bridges only where high-density connections are required. The company began applying the technology to mass production in 2017 and has accumulated related IP. Several major technology companies are considering organic bridges as an alternative to silicon bridges.
Samsung Electro-Mechanics' 2.1D package substrate technology uses organic bridges with five to seven RDL circuit layers embedded in FC-BGA substrates. The company aims to reduce the line width and spacing of the organic bridge circuitry to 1.5 micrometers ($\mu\text{m}$) to 2 $\mu\text{m}$, while shrinking via sizes to 4 $\mu\text{m}$ to 5 $\mu\text{m}$. The target pattern density between dies is 500 to 1,000 connections per millimeter.
Collaboration with Samsung Electronics' foundry business is also drawing attention. After Samsung Electro-Mechanics manufactures FC-BGA substrates based on the organic bridge, Samsung Electronics' foundry is expected to evaluate package performance and reliability. Samsung Electronics' foundry is developing advanced packaging technologies including 2.3D Cube-E, which uses a silicon bridge, and 2.3D Cube-R, which is based on an organic RDL interposer. Samsung Electro-Mechanics' organic bridge substrate is expected to support an expansion of Samsung Electronics' foundry packaging services.