三星目标HBM5性能翻倍，zHBM提升8倍：AI内存战略
三星电子计划使其下一代高带宽内存HBM5的性能较HBM4E翻倍，并进一步将后续世代zHBM的性能提升至8倍。该战略旨在强化其在AI内存市场的竞争力。
原文深度解读
本文报道了三星电子在SEMICON Taiwan 2024上公布的新一代AI内存战略。三星目标使HBM5性能较HBM4E翻倍，zHBM性能达HBM4E的8倍，并推出zNAND-O以满足大语言模型需求。该战略通过3D结构创新提升容量、带宽和能效，旨在巩固其在AI内存市场的领导地位。
- 三星电子在SEMICON Taiwan 2024上由存储事业部产品规划负责人Choi Jang-seok公布了'CUBE'战略。
- HBM5目标性能为HBM4E的2倍，每瓦性能提升20%，热阻降低20%。
- zHBM目标性能为HBM4E的8倍，每瓦性能提升3倍，热阻降低75-90%。
- zNAND-O目标位密度为DRAM的10倍，读带宽和能效为NAND的7倍，计划2028年开始送样。
- CUBE战略代表容量、优化、带宽和效率，核心是通过3D结构同时提升这些指标。
- 三星计划扩展产品线，从通用DRAM和NAND到HBM、企业级SSD，以及下一代zHBM和zNAND-O。
供应链影响
- HBM5和zHBM的性能提升可能推动AI加速器对高带宽内存的需求增长，影响相关供应链的产能分配。
- zNAND-O的推出可能改变大容量存储市场的竞争格局，取决于其量产时间和成本。
- 3D结构创新可能增加对先进封装和材料的需求，影响上游设备和材料供应商。
- 三星扩大产品线可能加剧与SK海力士、美光等竞争对手的市场争夺，取决于技术实现和客户采纳。
- 热阻降低和能效提升可能使数据中心更倾向于采用三星产品，但取决于实际性能和价格。
系统解读，仅作为判断线索，不构成备货、出货、涨价或投资建议。
在台北举行的SEMICON Taiwan 2024上，三星电子DS部门存储业务部产品规划负责人Choi Jang-seok介绍了公司克服内存技术局限的'CUBE'战略。（照片=三星电子）
三星电子旨在使其下一代高带宽内存（HBM）HBM5的性能较HBM4E翻倍，并进一步将后续世代zHBM的性能提升至HBM4E的8倍。公司正利用3D结构创新来确保下一代内存的领导地位。
Choi Jang-seok在台湾台北举行的SEMICON Taiwan 2024的'内存高管峰会'上发表主题演讲时，公布了这一下一代内存战略。
对于目前正在开发的HBM5，三星的目标是性能较HBM4E提升2倍，每瓦性能提升20%，热阻降低20%，以满足AI加速器对高性能和低功耗的需求。
zHBM专为HBM5之后的时代设计，将进一步提升性能。三星的目标是使zHBM达到HBM4E性能的8倍和每瓦性能的3倍，并计划将热阻降低75-90%。
公司还在推进zNAND-O，以满足大语言模型（LLM）的大容量内存需求。zNAND-O的目标是位密度较DRAM提升10倍，同时读带宽和能效较NAND提升7倍。三星计划于2028年开始zNAND-O送样。
三星已将其下一代内存发展方向正式化为'CUBE'战略。
CUBE代表△容量 △优化 △带宽 △效率（功耗/热效率）。除了简单地垂直堆叠内存外，核心重点是通过3D结构同时提升容量、带宽和功耗/热效率。
三星计划扩展其产品线——从通用DRAM和NAND到HBM、企业级SSD，以及下一代zHBM和zNAND-O——以加强其在AI内存市场的领导地位。
Choi强调：“3D的最终目标是减少移动单个数据位所需的能量。我们正通过提升结构效率来最大化每瓦性能。”
SEMICON Taiwan由国际半导体产业协会（SEMI）组织，是一场全球半导体盛会，于2日至4日举行。
At SEMICON Taiwan 2024, held in Taipei on the 1st, Choi Jang-seok, a senior manager and head of product planning at Samsung Electronics' Memory Business Division under DS Division, presented the company's 'CUBE' strategy to overcome memory technology limitations. (Photo=Samsung Electronics)
Samsung Electronics aims to double the performance of its next-generation high-bandwidth memory (HBM), HBM5, compared to HBM4E, and further elevate zHBM—its subsequent generation—to eight times the performance of HBM4E. The company is leveraging 3D structural innovation to secure leadership in next-generation memory.
Choi Jang-seok unveiled this next-generation memory strategy during his keynote speech at the 'Memory Executive Summit' held at SEMICON Taiwan 2024 in Taipei, Taiwan, on the 1st.
For HBM5, currently under development, Samsung targets a 2x performance improvement over HBM4E, a 20% increase in performance per watt, and a 20% reduction in thermal resistance to meet AI accelerators' demands for high performance and low power consumption.
zHBM, designed for the post-HBM5 era, will push performance even further. Samsung aims for zHBM to achieve 8x the performance and 3x the performance per watt of HBM4E, with plans to reduce thermal resistance by 75-90%.
The company is also advancing zNAND-O, targeting large-capacity memory needs for large language models (LLMs). zNAND-O aims to increase bit density 10x compared to DRAM while improving read bandwidth and power efficiency by 7x over NAND. Samsung plans to begin zNAND-O sampling in 2028.
Samsung has formalized its next-generation memory development direction under the 'CUBE' strategy.
CUBE stands for △Capacity (capacity) △Utilization (optimization) △Bandwidth (bandwidth) △Efficiency (power/thermal efficiency). Beyond simply stacking memory vertically, the core focus is on simultaneously enhancing capacity, bandwidth, and power/thermal efficiency through 3D structures.
Samsung plans to expand its product lineup—from general-purpose DRAM and NAND to HBM, enterprise SSDs, and next-generation zHBM and zNAND-O—to strengthen its leadership in the AI memory market.
Choi emphasized, “The ultimate goal of 3D is to reduce the energy required to move a single bit of data. We are maximizing performance per watt by enhancing structural efficiency.”
SEMICON Taiwan, organized by the Semiconductor Equipment and Materials International (SEMI), is a global semiconductor event taking place from the 2nd to the 4th.