LG Innotek推进嵌入式基板与硅电容技术
LG Innotek推出用于AI芯片的嵌入式FC-BGA基板，将硅电容集成于封装基板内部。该公司还计划进一步开发相关技术。
原文深度解读
LG Innotek在2026年KPCA Show上展示了用于AI芯片的嵌入式FC-BGA基板样品，将硅电容嵌入基板内部。文章涉及LG Innotek、村田、三星电机、台积电等公司，时间点为2026年9月9日。关键信息包括两种嵌入结构（核心层和积层）、硅电容的优势（低ESL）、以及LG Innotek约十年的嵌入技术开发历史。这与电子元器件供应链相关，涉及基板制造、被动元件供应和先进封装技术。
- LG Innotek于2026年9月9日在仁川松岛Convensia举办的KPCA Show 2026上展示了嵌入式FC-BGA基板样品，硅电容嵌入在基板的核心层或积层中。
- 核心层结构可容纳较厚、高电容的硅电容；积层结构嵌入较薄硅电容以降低基板总厚度。
- 硅电容通过在硅晶圆上形成介电层和电极层制成，具有低等效串联电感（ESL），适合高频稳定供电。
- 主要硅电容供应商包括村田和三星电机；台积电在先进封装中使用内部生产的硅基深沟槽电容（DTC）。
- LG Innotek开发嵌入技术约十年，最初在FC-CSP中嵌入MLCC，2024年推出带嵌入式硅电容的FC-BGA技术，去年开始应用于量产产品。
- LG Innotek还正在开发在FC-BGA中嵌入有源器件和桥接器的技术，以扩展基板功能。
供应链影响
- 对嵌入式基板的需求增长可能推动FC-BGA基板供应商增加产能，具体取决于AI芯片市场的扩张速度。
- 硅电容在基板内部的嵌入可能改变被动元件供应链，村田、三星电机等供应商的订单可能增加，取决于技术采用率。
- LG Innotek的嵌入技术可能影响基板制造工艺，对设备供应商提出新要求，取决于其量产规模。
- 台积电使用内部DTC可能减少对外部硅电容供应商的依赖，可能影响市场格局，取决于其封装技术路线。
- 嵌入有源器件和桥接器的开发可能提升基板附加值，可能改变基板与半导体封装之间的分工，取决于技术成熟度。
系统解读，仅作为判断线索，不构成备货、出货、涨价或投资建议。
LG Innotek在KPCA Show 2026上展示的嵌入式基板样品，于9月9日展出。硅电容嵌入在积层中。（照片：THE ELEC）
LG Innotek推出了一款嵌入式倒装芯片球栅阵列（FC-BGA）基板，将硅电容集成在封装基板内部，用于人工智能芯片。该公司还在开发嵌入有源器件和桥接器的技术。随着更高性能的AI芯片需要更稳定的电力传输，对嵌入式基板（尤其是FC-BGA）的需求正在增长。
LG Innotek在9月9日于仁川松岛Convensia举行的KPCA Show 2026上展示了带有嵌入式硅电容的FC-BGA样品。该公司展示了两种结构，硅电容分别嵌入在基板的核心层或积层中。
核心层结构可容纳相对较厚、高电容的硅电容。积层结构嵌入较薄的硅电容，以降低整体基板厚度。LG Innotek表示，嵌入式硅电容的位置和规格可根据半导体和基板设计而变化。
硅电容是一种在硅晶圆上形成介电层和电极层制成的无源元件。它存储半导体所需的电力，并瞬时供应以抑制电压波动。传统上，电容安装在基板表面，通过铜互连向芯片供电。将电容嵌入基板内部缩短了半导体与电容之间的供电距离，同时释放了基板表面的安装面积。
硅电容因其低等效串联电感（ESL）而特别适合高频下的稳定供电。AI半导体高速运行，可能瞬时消耗大量电力。较低的ESL有助于抑制电压波动。
主要的硅电容供应商包括村田和三星电机。台积电也在先进封装中使用内部生产的硅基深沟槽电容（DTC）。
LG Innotek开发嵌入技术已有约十年。最初，它在倒装芯片芯片级封装（FC-CSP）中嵌入多层陶瓷电容（MLCC）。随着AI半导体市场的扩大，该公司于2024年推出了带嵌入式硅电容的FC-BGA技术，并于去年开始将其应用于量产产品。
LG Innotek还在开发在FC-BGA中嵌入有源器件和桥接器的技术，除了硅电容和电感等无源元件之外。有源器件直接控制信号和电力，而桥接器在短距离内连接多个芯片，以支持高速信号传输。目标是扩展基板的角色，超越简单地将半导体连接到主板。
“我们应用嵌入技术已有约10年，从FC-CSP中的无源元件开始，”LG Innotek的一位官员表示。“随着FC-BGA变得更加先进，它正重新受到关注。”
“过去，基板只是传输信号的媒介，但现在它们通过集成硅电容、电感和其他元件，自身也在提供功能，”该官员表示。“将元件从基板表面移到内部，为客户提供了更大的设计灵活性，并实现了更薄的产品。”
An embedded substrate sample unveiled by LG Innotek at KPCA Show 2026 on Sept. 9. A silicon capacitor is embedded in the buildup layer. (Photo: THE ELEC)
LG Innotek has unveiled an embedded flip-chip ball grid array (FC-BGA) substrate with silicon capacitors integrated inside the package substrate for artificial intelligence chips. The company is also developing technology to embed active devices and bridges. Demand for embedded substrates, particularly FC-BGAs, is growing as higher-performance AI chips require more stable power delivery.
LG Innotek displayed FC-BGA samples with embedded silicon capacitors at KPCA Show 2026, held at Songdo Convensia in Incheon on Sept. 9. The company showed two structures, with silicon capacitors embedded in either the substrate’s core layer or buildup layer.
The core-layer structure accommodates relatively thick, high-capacitance silicon capacitors. The buildup-layer structure embeds thinner silicon capacitors to reduce overall substrate thickness. LG Innotek said the location and specifications of the embedded silicon capacitors can be varied depending on the semiconductor and substrate design.
A silicon capacitor is a passive component made by forming dielectric and electrode layers on a silicon wafer. It stores power required by a semiconductor and supplies it instantaneously to suppress voltage fluctuations. Conventionally, capacitors are mounted on the substrate surface and deliver power to the chip through copper interconnects. Embedding capacitors inside the substrate shortens the power-delivery distance between the semiconductor and capacitor while freeing up mounting area on the substrate surface.
Silicon capacitors are particularly suited to stable power delivery at high frequencies because of their low equivalent series inductance (ESL). AI semiconductors operate at high speeds and can draw large amounts of power instantaneously. Lower ESL helps suppress voltage fluctuations.
Major silicon capacitor suppliers include Murata and Samsung Electro-Mechanics. TSMC also uses internally produced silicon-based deep trench capacitors (DTCs) in advanced packaging.
LG Innotek has been developing embedding technology for about a decade. It initially embedded multilayer ceramic capacitors (MLCCs) in flip-chip chip-scale packages (FC-CSPs). As the AI semiconductor market expanded, the company unveiled FC-BGA technology with embedded silicon capacitors in 2024 and began applying it to mass-produced products last year.
LG Innotek is also developing technology to embed active devices and bridges inside FC-BGAs, in addition to passive components such as silicon capacitors and inductors. Active devices directly control signals and power, while bridges connect multiple chips over short distances to support high-speed signal transmission. The goal is to expand the substrate’s role beyond simply connecting semiconductors to the mainboard.
“We have applied embedding technology for about 10 years, beginning with passive components inside FC-CSPs,” an LG Innotek official said. “It is attracting renewed attention as FC-BGAs become more advanced.”
“In the past, substrates simply served as a medium for transmitting signals, but they are now evolving to provide functionality themselves by incorporating silicon capacitors, inductors and other components,” the official said. “Moving components from the substrate surface to the inside gives customers greater design flexibility and enables thinner products.”