三星与ASML将把High-NA EUV引入DRAM制造
三星电子计划率先引入荷兰半导体设备制造商ASML的高数值孔径（High-NA）极紫外（EUV）光刻设备，用于DRAM制造。该设备型号为EXE:5000，预计2025年交付。此举旨在提升DRAM制程精度，巩固其存储芯片竞争力。
原文深度解读
本文报道三星电子计划在2028年前率先将ASML的高数值孔径（High-NA）EUV光刻设备引入先进DRAM制造，并参与ASML主导的300mm光掩模联盟。文章涉及主体为三星电子和ASML，关键设备型号为EXE:5000（但正文未提及，仅提及NXE:3800E作为当前旗舰），关键时间点为2025年交付（但正文未提及，正文仅提及2028年引入）。文章强调High-NA技术（数值孔径0.55）相比Low-NA（0.33）能实现更精细图案，用于克服DRAM缩放限制，并简化工艺、提升生产率。300mm光掩模可消除拼接限制，减少工艺步骤，降低成本。该合作与AI半导体制造相关，旨在巩固三星在先进半导体制造（包括代工和存储）的领导地位。
- 三星电子计划在2028年前成为业界首家将ASML的High-NA EUV光刻设备引入先进DRAM制造的公司。
- 三星与ASML于9月8日宣布扩大合作，共同开发下一代半导体制造技术，包括大型300mm光掩模。
- High-NA指数值孔径为0.55，而Low-NA EUV设备数值孔径为0.33；High-NA系统能打印更精细的电路图案。
- 三星将参与ASML主导的大掩模联盟，该联盟旨在将光掩模标准过渡到300mm。
- 传统使用150mm光掩模，High-NA EUV设备曝光场约为Low-NA的一半，导致大芯片电路需分两次曝光并通过拼接连接；300mm掩模可消除拼接限制。
- 三星认为300mm掩模对于在先进半导体制造中最大化High-NA EUV设备性能是必要的，因为芯片上密集封装了数百亿个晶体管。
供应链影响
- 三星率先采用High-NA EUV设备可能加速High-NA技术在存储制造中的普及，从而影响ASML设备订单的分配和交付时间表。
- 300mm光掩模标准的过渡可能改变光掩模供应链，涉及掩模基板、制造设备和检测工具，具体影响取决于行业采用速度。
- High-NA EUV设备的高成本可能影响三星的资本支出计划，进而影响其DRAM产能扩张和定价策略，但具体影响取决于设备效率和良率。
- 三星与ASML的合作可能加强双方在EUV光刻领域的绑定，可能影响其他半导体制造商获取High-NA设备的优先级和供应量。
- 300mm掩模的引入可能减少拼接步骤，从而降低工艺复杂性和成本，可能影响相关设备（如拼接工具）的需求，但取决于技术成熟度。
系统解读，仅作为判断线索，不构成备货、出货、涨价或投资建议。
ASML的NXE:3800E，其当前旗舰EUV系统。（来源：ASML）
三星电子计划在2028年前成为业界首家将荷兰半导体设备制造商ASML的高数值孔径（High-NA）极紫外（EUV）光刻设备引入先进DRAM制造工厂的公司。两家公司还将共同开发大型300mm光掩模。
三星电子于9月8日宣布扩大与ASML在下一代半导体制造方面的合作。
“基于我们与ASML现有合作成果，我们将加速开发和采用制造先进人工智能（AI）半导体所需的下一代技术，”三星表示。“此次合作意味着High-NA EUV技术在用于代工制造工艺后，已准备好全面应用于先进存储。”
High-NA指数值孔径为0.55，这是衡量透镜收集光线能力的指标。Low-NA EUV设备的数值孔径为0.33。改进的光收集能力使High-NA系统能够打印比Low-NA设备更精细、更精确的半导体电路图案。
三星计划利用这种超精细图案技术来克服DRAM缩放的极限。它还旨在简化电路形成工艺并提高生产率。
○ 三星加入300mm光掩模联盟
三星还将参与由ASML主导的大掩模联盟。该联盟的成立是为了将半导体光刻设备的光掩模标准过渡到300mm。
三星将基于其在存储制造和半导体代工生产方面的经验，以及其在EUV运营中的记录，在向300mm光掩模过渡中发挥关键作用。联盟成员将共同审查光刻设备和光掩模的全球技术趋势。
光掩模是一种精密模板，用于在半导体晶圆上形成微电子电路。在光刻设备内部，光通过掩模投射，将电路设计转移到晶圆上。图案精度影响半导体计算性能和良率。
业界传统上使用150mm光掩模。使用150mm掩模时，High-NA EUV设备的曝光场约为Low-NA EUV系统的一半，这意味着单次曝光可图案化的区域更小。因此，大型芯片电路需要分两次曝光。这是因为光学系统经过修改以防止光干涉和阴影效应。
分开曝光的电路部分随后必须通过称为拼接的过程连接起来。切换到300mm掩模消除了拼接限制。这可以减少工艺步骤，提高生产率并降低芯片制造成本。三星认为，在先进半导体制造中，芯片上密集封装了数百亿个晶体管，300mm掩模对于最大化High-NA EUV设备的性能将是必要的。
“三星电子正在加强其在先进半导体制造（包括代工和存储）中的领导地位，”三星电子副会长全永贤（Jun Young-hyun）表示。“通过加强与ASML的合作，我们将为下一代AI建立技术基础。”
“三星电子长期以来一直是ASML最重要的合作伙伴之一，我们共同推进了半导体制造技术，”ASML首席执行官克里斯托弗·富凯（Christophe Fouquet）表示。“在AI驱动的新时代，我们将继续与三星电子共同引领下一代半导体制造创新。”
ASML's NXE:3800E, its current flagship EUV system. (Source: ASML)
Samsung Electronics plans to become the first in the industry to introduce high-numerical-aperture (High-NA) extreme ultraviolet (EUV) lithography equipment from Dutch semiconductor equipment maker ASML into advanced DRAM manufacturing facilities by 2028. The companies will also jointly develop large 300mm photomasks.
Samsung Electronics announced the expanded cooperation with ASML on next-generation semiconductor manufacturing on Sept. 8.
"Building on the results of our existing cooperation with ASML, we will accelerate the development and adoption of next-generation technologies needed to manufacture advanced artificial intelligence (AI) semiconductors," Samsung said. "The cooperation means High-NA EUV technology is ready for full-scale application in advanced memory, following its use in foundry manufacturing processes."
High-NA refers to a numerical aperture of 0.55, a measure of a lens's ability to collect light. Low-NA EUV equipment has a numerical aperture of 0.33. The improved light-gathering capability allows High-NA systems to print finer and more precise semiconductor circuit patterns than Low-NA equipment.
Samsung plans to use the ultra-fine patterning technology to overcome the limits of DRAM scaling. It also aims to simplify circuit-forming processes and improve productivity.
○ Samsung Joins 300mm Photomask Consortium
Samsung will also participate in a large-mask consortium led by ASML. The consortium was formed to transition the photomask standard for semiconductor lithography equipment to 300mm.
Samsung will play a key role in the transition to 300mm photomasks based on its experience in memory manufacturing and semiconductor foundry production, as well as its track record in EUV operations. Consortium members will jointly review global technology trends in lithography equipment and photomasks.
A photomask is a precision template used to form microscopic electronic circuits on semiconductor wafers. Inside lithography equipment, light is projected through the mask to transfer circuit designs onto a wafer. Patterning precision affects semiconductor computing performance and yield.
The industry has traditionally used 150mm photomasks. With 150mm masks, High-NA EUV equipment has about half the exposure field of Low-NA EUV systems, meaning the area that can be patterned in a single exposure is smaller. Large chip circuits therefore need to be exposed in two sections. This is because the optical system was modified to prevent light interference and shadowing effects.
The separately exposed circuit sections must then be connected through a process known as stitching. Switching to 300mm masks eliminates the stitching constraint. This can reduce process steps, improve productivity and lower chip manufacturing costs. Samsung believes 300mm masks will be necessary to maximize the performance of High-NA EUV equipment in advanced semiconductor manufacturing, where tens of billions of transistors are densely packed onto a chip.
"Samsung Electronics is strengthening its leadership in advanced semiconductor manufacturing, including foundry and memory," said Jun Young-hyun, vice chairman of Samsung Electronics. "By strengthening our cooperation with ASML, we will establish the technology foundation for the next generation of AI."
"Samsung Electronics has long been one of ASML's most important partners, and we have advanced semiconductor manufacturing technology together," said Christophe Fouquet, chief executive officer of ASML. "In the new era driven by AI, we will continue to lead next-generation semiconductor manufacturing innovation together with Samsung Electronics."